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ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
ELECTRICAL CHARACTERISTICS (continued)
((V IN = 2.75V to 13.2V and V AUXIN = 0V) or (V IN = 1V and V AUXIN = 2.75V to 13.2V), R STH = open, R FTH = 0, V UVLO = 1V, V OVI = 0V,
T A = -40°C to +85°C, unless otherwise noted. Typical values are at V IN = 12V and T A = +25°C. See the Typical Operating Circuit.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V IN Switchover Hysteresis
(Note 4)
V IN_SOHYS
40
mV
Charge-Pump Frequency
f CP
External
Internal, V IN < 5V, V AUXIN < 5V
70
1100
kHz
PROTECTION
OVI Input Bias Current
I OVI
500
nA
OVI Threshold
OVP Output Low Voltage
OVP Leakage Current
PGOOD Leakage Current
PGOOD Output Low Voltage
V OVI_TH
V OVP_LOW
I OVP_LEAK
I PG_LEAK
V PG_LOW
OVI rising
V OVI = 1V, I SINK = 10mA
V IN = 2.75V, V OVP = 13.2V
V PGOOD = 13.2V
I SINK = 2mA
0.568
0.6
0.2
0.2
0.632
0.4
1
1
0.4
V
V
μA
μA
V
Note 1:
Note 2:
Note 3:
Note 4:
All devices are production tested at +25°C. Limits over temperature are guaranteed by design.
Threshold is reached when charge pump turns off.
Gate discharge current is guaranteed through the testing of gate fall time.
V IN switchover threshold is V IN at which the gate-drive voltage (V GATE - V IN ) goes from 5V to 7V, V IN rising and (V IN ≥ V BUS ).
Typical Operating Characteristics
(T A = +25°C, unless otherwise noted. See the Typical Operating Circuit.)
AUXIN SUPPLY CURRENT
SLOW-COMPARATOR REVERSE VOLTAGE
vs. TEMPERATURE (V IN = V BUS = 1V)
GATE-CHARGE CURRENT vs. V IN
THRESHOLD (V STH vs. R STH )
3
V AUXIN = 10V
V AUXIN = 5V
6.0
5.5
5.0
4.5
T A = +25 ° C
0.20
0.18
0.16
T A = -40 ° C, T A = +25 ° C,
T A = +85 ° C, T A = +125 ° C
2
4.0
0.14
3.5
3.0
2.5
T A = -40 ° C
T A = +85 ° C
0.12
0.10
0.08
1
V AUXIN = 2.7V
2.0
1.5
T A = +125 ° C
0.06
1.0
0.5
0.04
0.02
0
0
0
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE ( ° C)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V IN (V)
10
100
R STH (k ? )
1000
4
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